The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers
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Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice
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We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in
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Abstract: Amorphous Si-rich silicon carbide films were prepared by magnetron co-sputtering and subsequently annealed at 900-1100 degrees C. After annealing
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FULL TEXT Abstract: The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix
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We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in
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Official Full-Text Paper (PDF): Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix Google+
Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix Arindam Kole and Partha Chaudhuri Citation: AIP
Luminescence nanocrystals or quantum dots give grate potential for bio-analysissilicon carbide nanocrystals which elucidate the behavior of the silicon
Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray
Zsolt and Balogh, István and Czigány, Zsolt and Kamarás, Katalin and Gali, Ádám (2013) Preparation of small silicon carbide quantum dots by wet
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pTwo different annealing processes have been applied on Silicon rich SiCsubX/sub amorphous samples: furnace annealing at 1100 °C/1hr and RTA