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Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power,
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2003530- Amorphous silicon carbide nanosprings, as well as biphase (crystalline core/amorphous sheath) helical nanowires, have been synthesized by p
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200714-A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of sp
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single polytype single crystal silicon carbide a micropipe density less than 200 cm-2, David Phillip MaltaHudson McDonald HobgoodStephan
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 911 Silicon Carbide 2006 Materials, Processing and Devices Symposium held April 18-20, 2006, San
The invention includes the steps of heating a silicon carbide crystal havingMALTA, David, PhillipHOBGOOD, Hudson, McDonaldMUELLER, Stephan, Georg
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