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Structure of silicon carbide powders produced in interaction of silica with carbon black doi:10.1007//p>
A Hybrid Silicon Carbide Differential Amplifier for 350C Operationdoi:10.1109/9780470544884.ch102Randall Kirschman
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Modeling of Structural Defects in Silicon Carbide doi:10.1134/S0020168519010151Inorganic MaterialsE. V. SokolenkoNorth-Caucasus Federal UniversityG. V. Sly
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Stone J.; Hutcheon I.D.; Epstein S.; Wasserburg G.J., 1990: Exotic silicon carbide in carbonaceous chondrites , 1990: Exotic silicon carbide in c
Characterization of Silicon Carbide Differential Amplifiers at High Temperature the JFET technology reported here would enable analog sensor interface
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Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers(SiC VJFET) for analog circuit design exhibits significant design challenges,
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Amplifiers”, Presented at the 58th DRC, Denver Hagon et al Integrated programmable analog matched semi-insulating silicon carbide substrate; source
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Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers(SiC VJFET) for analog circuit design exhibits significant design challenges,
Analog integrated circuit design issues using 6H-silicon carbide CMOS technologyThe objective of this research is to address the design issues of integrated
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