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Finite Element Model and Size Dependent Stability Analysis of Boron Nitride and Silicon Carbide Nanowires/Nanotubes Article· April 2019 with 7 Reads ·
201942-A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating fi
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Request PDF on ResearchGate | Molecular pore-network model for nanoporous materials. I: Application to adsorption in silicon-carbide membranes | We develop
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Request PDF on ResearchGate | Study of Boron-Doped Silicon Carbide Thin Films | Prepared a-SiC thin films with plasma enhanced chemical vapor deposition
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2019516-IEC63068-Edition1.0019-01INTERNATIONALSTANDARDSemiconductordevices–Non-destructiverecognitioncriteriaofdefectsinsiliconcarbidehomoepitaxial
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201942-A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating fi
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Silicon carbide is a hard covalently bonded material predominantly produced by the carbothermal reduction of silica (typically using the Acheson