Research Publications X-ray double and triple crystal diffractometry of silicon crystals with small defects Publication details X-ray double and triple
Valence and conduction bands of carbon silicon cubic systems are first obtained by a process called linear combination of atomic orbitals self-consistent
Wafers from three heights and two different lateral positions (corner and centre) of four industrial multicrystalline silicon ingots were analysed with respect
Multi-Conceptual Mechanical Design Optimization of Capacitive Pressure Sensors via Finite Element Analysis with use of Anisotropic Behavior of Silicon Crystal
1111 Observation of dislocations generated from an oxide precipitate in silicon crystal by HVEM tomographyKenji HIGASHIDA, Masaki TANAKA Author information
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened
The growth of large diameter single crystal silicon is one of the active branches in silicon material research and production. It is known from experiments
Request PDF on ResearchGate | Overcoming the absorption limit in high-harmonic generation from crystals | Since the new millennium coherent extreme ultra-
This paper analyzes the effect of the anisotropy of single crystal silicon on the frequency split of the vibrating ring gyroscope, operated in the n =
M. Sharif Uddin; K.H.W. Seah; M. Rahman; X.P. Li; K. Liu, 2007: Performance of single crystal diamond tools in ductile mode cutting of silicon
Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a
Hiroshi Hasegawas 1 research works with 155 citations and 2 reads, including: Theory of Cyclotron Resonance in Strained Silicon Crystals The valence ba
A fully wafer-level packaged single-crystal silicon single-pole nine-throw (SP9T) MEMS switch using benzocyclobutene as a packaging adhesive layer is
Chen, X; Chafetz, H S.; Andreasen, R; Lapen, T J., 2016: Silicon isotope compositions of euhedral authigenic quartz crystals: Implications for
D. N. Gulidov; B. L. Aidelman; V. Yu. Charlamov; Yu. D. Chistyakov, 1986: The Use of an Electrode Potential in the Investigation of a Single
2013111-single crystals and the use of bulk or thin silicon films on indium tin oxide, t Yi C, Chandiran A, Nazeeruddin M, et al
We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to
Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and
Inelastic nuclear interaction probability of 400 GeV/c protons interacting with bent silicon crystals was investigated, in particular for both types of
High temperature creep of single silicon crystalsM. M. Myshlyaev, V. I. Nikitenko Institute of Solid State Physics, Academy of Sciences of the USSR,
Download Citation on ResearchGate | Optical design of single plano-convex freeform lens-based illumination system for color filter liquid crystal on silicon
Abstract— The dependence of the strain fields arising in the operating parts (units) of a silicon X-ray interferometer under mechanical impact
In this work, molecular dynamics simulations of the nanoscratching of polycrystalline and singlecrystalline silicon substrates using a single-crystal diamond
Generation of highly uniform droplets using asymmetric microchannels fabricated on a single crystal silicon plate: Effect of emulsifier and oil types
, QS and Jia, YP and Wang, G and Guo, LW and Chen, XL (2012) Growth and properties of wide bandgap semiconductor silicon carbide single crystal
In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so
N. A. Matchanov,A. M. Mirzabaev,B. R. Umarov,M. A. Malikov…, 2017: Experimental studies of the monocrystal and polycrystal characteristics of
Han, X. S.; Hu, Y.-Z.; Yu, S., 2008: Molecular dynamics analysis micro-mechanism of ductile machining single crystal silicon by means of M
A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates By Dahl-Young Khang, Hanqing Jiang, Young Huang, John