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11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
Implantation and Optical Characterization of Color Centers in Silicon Carbideof color centers with photoluminescence and cathodoluminescence microscopy
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
Cathodoluminescence of silicon carbide Authors Authors and affiliations L. Prentice Hall, New Jersey.Google Scholar /10/. Reynolds C.L., Wawner F
cathodoluminescence of geological materials silicone grease silicon valley bank silicon silicon valley silicone sealant cathodoluminescence from metallic copp
Synthesis and Cathodoluminescence of Silicon Carbide Nanowires ARTICLE in ACTA PHYSICA POLONICA SERIES A · JANUARY 2009 Impact Factor: 0.6 CITATIONS 2
PROPERTIES OF Silicon Carbide Edited by GARY L HARRISMaterials Science Research Center of Excellence Howard university, Washin… SlideShare Explore Search
characterization of one-dimensional silicon carbide nanostructures (nanowires of 3C-SiC polytype with zincblend structure) by means of cathodoluminescence
CATHODOLUMINESCENCE OF ION-IMPLANTED SILICON CARBIDE.doi:10.1017/S1431927607081640Cathodoluminescence of ion-implanted silica layersn33110* --physics (solid
Combustion Formation of Novel Nanomaterials: Synthesis and Cathodoluminescence of Silicon Carbide Nanowires78.67.Bf81.07.Bc61.46.Hk
characterization of one-dimensional silicon carbide nanostructures (nanowires of 3C-SiC polytype with zincblend structure) by means of cathodoluminescence
J. A. Powell; D. J. Larkin, 1997: Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide bonds in the electronic properties of epitaxia
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
Synthesis and Cathodoluminescence of Silicon Carbide Nanowires ARTICLE in ACTA PHYSICA POLONICA SERIES A · JANUARY 2009 Impact Factor: 0.6 CITATIONS 2
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
characterization of one-dimensional silicon carbide nanostructures (nanowires of 3C-SiC polytype with zincblend structure) by means of cathodoluminescence
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
Silicon Carbide, III-Nitrides and Related Materials Parti ICSCIII-N97 Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and
Cathodoluminescence of silicon carbidedoi:10.1007/bf01591044The observed cathodoluminescence (CL) is relatively weak in comparison with commonly used CL
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
of silicon carbide defects based on their The need for new generation high power while cathodoluminescence and lifetime mapping
A room temperature cathodoluminescence study of dislocations in silicon on ResearchGate, the professional network for scientists. Cathodoluminescence has
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
11–12, 2806–2808 (2009) / DOI 10.1002/pssb.200982321 Silicon carbide nanowires: synthesis and cathodoluminescence p s sb basic solid
Synthesis and Cathodoluminescence of Silicon Carbide Nanowires ARTICLE in ACTA PHYSICA POLONICA SERIES A · JANUARY 2009 Impact Factor: 0.6 CITATIONS 2