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Infineon Technologies AG and Cree announced a strategic long-term supply agreement for the provision of silicon carbide (SiC) wafers, allowing Infineon to

Infineon to Acquire Wolfspeed-Investor Presentation | Silicon

Infineon to acquireWolfspeed Investor Presentation July 14, 2016 Table of Contents 1 Key facts 2 Copyright © Infineon Technologies AG 2016. All

Methods of Planarizing SiC Surfaces - Infineon Technologies AG

A method of planarizing a roughened surface of a SiC substrate includes: forming a sacial material on the roughened surface of the SiC substrate,

Infineon Technologies | Discrete Semiconductor Products |

Order today, ships today. IDL06G65C5XUMA1 – Diode Silicon Carbide Schottky 650V 6A (DC) Surface Mount PG-VSON-4 from Infineon Technologies. Pricing

using SiC power semiconductors - 12 March 2014 - Infineon

Figure 3. SiC transistors (eg, SiC JFET from Infineon) in 3rd quadrantat large, having offered a range of products to the industry since 1973

Infineon Launches Automotive CoolSiC Schottky Diodes at 2018

Infineon Technologies presented the first products of its automotive Silicon Carbide portfolio: the CoolSiC Schottky diode family at this year’s

Charged EVs | Infineon introduces new CoolSic Schottky diodes

2018618-“The launch of the automotive CoolSiC Schottky diode family is a milestone in the deployment of Infineon’s SiC product portfolio for on-

Carbide Wafer Supply Agreement with Infineon | Business Wire

2018226-Cree, Inc. announces it signed a strategic long-term agreement to produce and supply Wolfspeed silicon carbide (SiC) wafers to Infineon Tech

Power - Infineon Technologies

Infineon is currently the only company in the silicon (Si), silicon carbide (SiC) and GaN. The product offering provides power stage

Infineon unveils new semiconductor plant, acquires SiC start

20181113-Germany-based leading semiconductor solutions manufacturer Infineon Technologies AG has reportedly laid the foundation stone for its new sem

Reliability considerations for recent Infineon SiC diode

Official Full-Text Paper (PDF): Reliability considerations for recent Infineon SiC diode releases Twitter Google+ LinkedIn Reddit Download full-text P

New CoolSiC Schottky diode 1200 V G5 portfolio from Infineon

Infineon Technologies extending the CoolSiC™ Schottky 1200 V G5 diode portfolio with the release of a TO247-2 package. Infineon Technologi

Product Brief 1200V CoolSiC N SiC JFET - Infineon

Consult Infineon Technologies - Sensorss Product Brief 1200V CoolSiC N SiC JFET brochure on DirectIndustry. Page: 1/2 Product Brief 1200V CoolSiC

Infineon targets automotive markets with SiC technology |

At this year's PCIM Europe trade fair in Nuremberg, Infineon presents the first silicon carbide products for automotive applications. The CoolSiC

SiC MOSFET offers ‘revolutionary’ performance

Described as ‘revolutionary’, Infineon’s CoolSiC silicon carbide MOSFET technology is said to achieve previously unattainable levels of power

Infineons Incredible SiC Race - Infineon Technologies

As a pioneer in the commercial use of SiC technology, Infineon has always had a head start in the race for the best silicon carbide products on the

1200V SiC MOSFET - /

Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017

Infineon develops SiC diodes for high-frequency power

MUNICH -- Infineon Technologies AG here today announced it has become the first chip maker to produce power Schottky diodes on silicon-carbide (SiC)

Infineon GaN on SiC RF power transistors anticipate 5G |

201598-Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile

1200V SiC Diode | FTM - Future Technology Magazine

2018915- FASTON terminal products, FPGAs, ground capacitors, HDT series, HDT0001, Infineon – New Generation 5 SiC Diodes Enables a New Level of

GaN-on-SiC RF transistors pave the way to 5G

Infineon Technologies has introduced the first devices in a family of GaN-on-SiC RF power transistors at this years European Microwave Week. (GaN-on

650V CoolSiC--《》2017

IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product


(Infineon Technologies AG, Germany) Mo-1A-1 USA Mo-2B-2 Large Area 4H SiC Products for Chris Parfeniuk 1, Jeffrey Quast 1, Bernd

SiC Schottky diodes target on-board charging of EVs and hybrids

201864-At this year’s PCIM Europe trade fair in Nuremberg (June 5 to June 7) Infineon Technologies AG presents the first products of its automotiv

Infineon Discloses 1200 V SiC MOSFETs for Power Conversion |

Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage

InfineonXMC4700DJIONBOARDSDK-360eet.PDF -

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Infineon Technologies is a world leader

CoolSiC™ Schottky Diode 1200V - Infineon Technologies

Products Applications Tools About Infineon Discoveries Careers Newsletter Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables

Trendforce: SiC,IDM

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First full-SiC-module from Infineon Influxes on Market for

Infineon Technologies announces to start its volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. Infine