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Silicon carbide having low dielectric constantdoi:US6855645 B2A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD
The technology comprises the following steps of cleaning a silicon carbide surface, before a dielectric layer is deposited, removing oxygen atoms of the
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Silicon carbide (SiC), dielectric constants, nonlinear opticsSemiconductorsGroup IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport,
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Vietnamese buyers are bidding lower for hot-rolled coil amid ample supply of both domestic materials and imports in the Southeast Asian country. Vietnam
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A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a
Dielectric properties of doped silicon carbide powder by thermal diffusion The doped SiC powders were prepared by the thermal diffusion process in nitrogen
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Materials and Processing of Gate Dielectric on Silicon Carbide (SiC) Surfacedoi:10.5772/52553react-text: 156 In this paper, a through process for a
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