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(2008) Wang et al. International Journal of Power Management Electronics. Read by researchers in: 100% Electrical and Electronic Engineering. A novel MOS-

emitter region formed of silicon carbide - NIPPON ELECTRIC

silicon carbide; Figure 2 is a diagram illustrating a relation between respective regions and a depletion layer in a bipolar transistor having an emitter

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near-infrared silicon carbide nanocrystalline emitters

OSTI.GOV Journal Article: Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Silicon carbide IR-emitter heating device and method for de

20031216-A method and a device for removing molded soft contact lenses, high-precision intraocular lenses and the like, from the individual molds in

High-Speed And On-Silicon-Chip Graphene Blackbody Emitters

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics. However, compound-semiconductor

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2018518- Sampling the Terahertz Near-Field in Ultrafast Terahertz Scanning Tunneling Localization of light and transport of infrared optical ima

Electron Emitters Based on Silicon Carbide Structures in

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with optically active spins in ultrapure silicon carbide |

Vacancy-related centres in silicon carbide are attracting growing et al. Engineering near-infrared single-photon emitters with optically

near-infrared silicon carbide nanocrystalline emitters

Bulk silicon carbide (SiC) is a very promising material system for bio- Near-infraredNanocrystalCarbideIrradiancePhotoluminescenceNanocrystallineOptical

July 2018 - Silicon Chip Online

This is only a preview of the July 2018 issue of Silicon Chip. You can view 40 of the 104 pages in the full issue and the advertisments. For

Silicon Carbide Emitter Turn-Off Thyristor

Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of

【PDF】near-infrared silicon carbide nanocrystalline emitters

Supplemental Material for Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects A. Muzha1,∗ F

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COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE

2016428-COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES Inventors: Fred Sharifi (Kirkland, WA, US) Henry Lezec (Bethesd

OSA | Hybrid Diamond-Silicon Carbide Structures Incorporating

Vuckovic, Hybrid Diamond-Silicon Carbide Structures Incorporating Silicon-Vacancies in Diamond as Quantum Emitters, in CLEO: 2015, OSA Technical Digest (

Silicon carbide emitter diodes by LPCVD (low-pressure

On Feb 12, 2011 S. B. Hewitt (and others) published: Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-

near-infrared silicon carbide nanocrystalline emitters

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the

near-infrared silicon carbide nanocrystalline emitters

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the

Bright and photostable single-photon emitter in silicon carbide

We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling

Silicon Carbide Emitter Turn-Off Thyristor

A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off device design and technology,” in Silicon Carbide: Recent Major Advances,

tunable silicon-carbide-based midinfrared thermal emitter

Lu Cai, Kaikai Du, Yurui Qu, Hao Luo, Meiyan Pan, Min Qiu, and Qiang Li, Nonvolatile tunable silicon-carbide-based midinfrared thermal emitter

dosimetric properties of silicon carbide (SiC) used in

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

deposition silicon carbide - Patent # 7501765 - PatentGenius

2009310-An ionizer emitter electrode is ideally formed of or at least partially coated with a carbide material, wherein the carbide material is sele

【LRC】infrared single photon emitters in ultrapure silicon carbide

Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov

Silicon Carbide Emitter Turn-Off Thyristor (Journal Article)

200811- Silicon Carbide Emitter Turn-Off Thyristor Article Details Other Related Research A novel MOS-controlled SiC thyristor device, the SiC emit

boron emitters on n-type c-Si solar cells using silicon

(2016) Surface passivation of boron emitters on silicon dioxide and a PECVD silicon oxynitride [email protected] supports OAI 2.0 with a base URL of

and Darlington transistors in 4-hydrogen-silicon carbide

High voltage implanted-emitter bipolar junction transistors and Darlington transistors in 4-hydrogen-silicon carbide High voltage implanted-emitter bipolar

Improving Defect-Based Quantum Emitters in Silicon Carbide

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