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(2008) Wang et al. International Journal of Power Management Electronics. Read by researchers in: 100% Electrical and Electronic Engineering. A novel MOS-
silicon carbide; Figure 2 is a diagram illustrating a relation between respective regions and a depletion layer in a bipolar transistor having an emitter
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OSTI.GOV Journal Article: Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
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High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics. However, compound-semiconductor
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Vacancy-related centres in silicon carbide are attracting growing et al. Engineering near-infrared single-photon emitters with optically
Bulk silicon carbide (SiC) is a very promising material system for bio- Near-infraredNanocrystalCarbideIrradiancePhotoluminescenceNanocrystallineOptical
This is only a preview of the July 2018 issue of Silicon Chip. You can view 40 of the 104 pages in the full issue and the advertisments. For
Advances in Power Electronics is a peer-reviewed, Open Access journal that publishes original research articles as well as review articles in all areas of
Supplemental Material for Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects A. Muzha1,∗ F
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2016428-COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES Inventors: Fred Sharifi (Kirkland, WA, US) Henry Lezec (Bethesd
Vuckovic, Hybrid Diamond-Silicon Carbide Structures Incorporating Silicon-Vacancies in Diamond as Quantum Emitters, in CLEO: 2015, OSA Technical Digest (
On Feb 12, 2011 S. B. Hewitt (and others) published: Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the
We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling
A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off device design and technology,” in Silicon Carbide: Recent Major Advances,
Lu Cai, Kaikai Du, Yurui Qu, Hao Luo, Meiyan Pan, Min Qiu, and Qiang Li, Nonvolatile tunable silicon-carbide-based midinfrared thermal emitter
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Engineering near infrared single photon emitters in ultrapure silicon carbide F. Fuchs1,∗ B. Stender1,∗ M. Trupke2, J. Pflaum1,3, V. Dyakonov
200811- Silicon Carbide Emitter Turn-Off Thyristor Article Details Other Related Research A novel MOS-controlled SiC thyristor device, the SiC emit
(2016) Surface passivation of boron emitters on silicon dioxide and a PECVD silicon oxynitride [email protected] supports OAI 2.0 with a base URL of
High voltage implanted-emitter bipolar junction transistors and Darlington transistors in 4-hydrogen-silicon carbide High voltage implanted-emitter bipolar
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