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pA bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film (6) in contact

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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Silicon Carbide Junction Transistors May 06, 2013A family of 1700V and 1200 V Junction Transistor Technical Highlights · Two offerings: 220 mΩ

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