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On Silicon Carbide Grains as the Carrier of the 21 Micron

Very recently, silicon carbide (SiC) grains with impurities were suggested to be the carrier of this enigmatic feature, based on recent laboratory data

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Infineon’s broad portfolio of Silicon Carbide (SiC) CoolSiC™ Schottky diodes, SiC MOSFETs and SiC hybrid modules from 600V to 1200V combine C

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Title: CO Observations of IRAS Sources with 11.3 Micron Silicon Carbide Dust Features: Erratum Authors: Leahy, D. A.; Kwok, Sun; Arquilla, 

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On the specific features of silicon carbide heteropolytype

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Features and mechanisms of growth of cubic silicon carbide

The mechanisms and specific features of the growth of silicon carbide layers through vacuum chemical epitaxy in the range of growth temperatures

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Key Features Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in on

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Silicon carbide CAS#: 409-21-2

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[0810.2599] Silicon carbide absorption features: dust

We have selected a subset of these stars with absorption features in the 10-13 $\mu$m range, which has been tentatively attributed to silicon carbide

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Silicon Carbide Power Devices - Semelab | Mouser

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